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Data Bridge Market Research analyses that the SiC Power Semiconductor Market is expected to reach a value of USD 7,030,515.23 thousand by 2030, at a CAGR of 26.0% during the forecast period. The global SiC power semiconductor market report also comprehensively covers pricing analysis, patent analysis, and technological advancements.
SiC power semiconductors are the most prevalent semiconductors and are considered the best choice for electronics. These SiC power semiconductors are applied in domestic, commercial, and industrial sectors and various other areas. SiC power semiconductors are available in two types of devices, such as SiC discrete devices and SiC bare die. Due to technological advancements, the prevalence of SiC discrete devices has been increasing faster. The SiC power semiconductor’ significant property is high thermal conductive properties along with various others that efficiently use electricity. SiC power semiconductors are used in telecommunication, energy and power, renewable power generation, and several other places. SiC power semiconductors are used in power electronics gaining prevalence among individuals. The demand for SiC power semiconductors in the global SiC power semiconductor market is increasing at a higher rate. For this, various market players are introducing new products and forming a partnership to expand their business in the global SiC power semiconductor market.
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Key Opportunity
- Strategic Partnership and Acquisition by SiC Manufacturers
There are various organizations and market players which are creating strategic partnerships and acquisitions. This partnership creates a huge positive impact on the growth of the Global SiC power semiconductor market. This collaboration results in cooperation, becoming a low-cost route for new competitors to gain technology and market access.
A joint venture involves two or more businesses pooling their resources and expertise to achieve a particular goal. There are many organizations that collaborate with each other’s and create a positive impact on the growth of the Global SiC power semiconductor market.
Noteworthy Players Operating at Regional and Global Levels:
- WOLFSPEED, INC.
- STMicroelectronics
- ROHM CO., LTD.
- Fuji Electric Co., Ltd.
- Mitsubishi Electric Corporation
- Texas Instruments Incorporated
- Infineon Technologies AG
- Semikron Danfoss
- Xiamen Powerway Advanced Material Co., Ltd.
- Renesas Electronics Corporation
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Microchip Technology Inc.
- Semiconductor Components Industries, LLC
- NXP Semiconductors
- UnitedSiC
- SemiQ Inc.
- Littlefuse, Inc.
- Allegro MicroSystems, Inc.
- Hitachi Power Semiconductor Device, Ltd. (A Subsidiary of Hitachi Group)
- GeneSiC Semiconductor Inc.
Recent Developments:
- In December 2022, STMicroelectronics and Soitec (Euronext Paris), in designing and manufacturing innovative semiconductor materials, announced the next stage of their cooperation on Silicon Carbide (SiC) substrates, with the qualification of Soitec’s SiC substrate technology by ST planned over the next 18 months. The goal of this cooperation is the adoption by ST of Soitec’s SmartSiC technology for its future 200mm substrate manufacturing, feeding its devices and modules manufacturing business, with volume production expected in the midterm. This collaboration will help the company to boost its financials as well as the growth of the Global SiC power semiconductor market.
- In July 2022, Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regard to the implementation of silicon carbide (SiC) inside power modules. Recently, ROHM’s latest 4th generation of SiC MOSFETs has been fully qualified in SEMIKRON’s eMPack modules for automotive use. Hence, both companies serve worldwide customers’ needs. This collaboration enhanced the company’s financials and made a positive impact on the growth of the Global SiC power semiconductor market.
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Global SiC Power Semiconductor Market Segmentation:
By Type
- MOSFETS
- Hybrid Modules
- Schottky Barrier Diodes (SBDS)
- IGBT
- Bipolar Junction Transistor (BJT)
- Pin Diode
- Junction FET (JFET)
- Others
By Voltage Range
- 301-900 V
- 901-1700 V
- Above 1701 V
By Wafer Size
- 6 Inch
- 4 Inch
- 2 Inch
- Above 6 Inch
By Wafer Type
- SiC epitaxial wafers
- Blank SiC wafers
By Application
- Electric Vehicles (EV)
- Photovoltaics
- Power supplies
- Industrial motor drives
- EV charging infrastructure
- RF Devices
- Others
By Vertical
- Automotive
- Utilities and energy
- Industrial
- Transportation
- IT and telecommunication
- Consumer electronics
- Aerospace and defense
- Commercial
- Others
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